CDF and Pcell Parameters in H35
1. High Voltage MOS Transistors
1.1: CDF Parameters for Simulation and for the Pcell
| Parameter | Name | Dependencies | Minimum | Maximum |
|---|---|---|---|---|
| Width Total | wtot | wtot=wg*gpd*mult | 10um/5um | max_width |
| Width of a Stripe | wg | wg=wtot/(gpd*mult) | 5um | max_width/(gpd*mult) |
| Length | l | independent | see ENG-243 | maxmoslength |
| Device Multiplier | mult | independent | 1 | 100 000 (1) |
| Width of a Device (2) | w | w=wg*gpd | - | - |
| Gates per Device (2) | gdp | Fixed Value | - | - |
| Number of Gates (2) | ng | ng=gpd*mult | - | - |
(1) Very large
values take a long time to calculate. Values greater 50 don't make any
sense.
(2) Not directly changeable
1.2 Parameters for HV MOS Pcells only
| Parameter | Name | Description |
|---|---|---|
| Substrate Guard Ring | subGuard | True: RPTUB Substrate Guard
Ring is drawn around the pcell layout False: Substrate Guard Ring has to be drawn by hand around a group of HV transistors |
1.3 Available Parameters for HV MOS Transistors
| Device | wtot | wg | l | mult | w | gpd | ng | subGuard |
|---|---|---|---|---|---|---|---|---|
| NMOS20T | yes | yes | yes | yes | yes | yes; gpd=2 | yes | no |
| NMOS20M | yes | yes | yes | yes | yes | yes; gpd=2 | yes | no |
| NMOS20H | yes | yes | yes | yes | yes | yes; gpd=2 | yes | no |
| NMOS20HS | yes | yes | yes | yes | yes | yes; gpd=1 | yes | no |
| NMOS50T | yes | yes | yes | yes | yes | yes; gpd=2 | yes | no |
| NMOS50M | yes | yes | yes | yes | yes | yes; gpd=2 | yes | no |
| NMOS50H | yes | yes | yes | yes | yes | yes; gpd=2 | yes | no |
| NMOS50HS | yes | yes | yes | yes | yes | yes; gpd=1 | yes | no |
| NMOSI20T | yes | yes | yes | yes | yes | yes; gpd=2 | yes | yes |
| NMOSI20M | yes | yes | yes | yes | yes | yes; gpd=2 | yes | yes |
| NMOSI20H | yes | yes | yes | yes | yes | yes; gpd=2 | yes | yes |
| NMOSI50T | yes | yes | yes | yes | yes | yes; gpd=2 | yes | yes |
| NMOSI50M | yes | yes | yes | yes | yes | yes; gpd=2 | yes | yes |
| NMOSI50H | yes | yes | yes | yes | yes | yes; gpd=2 | yes | yes |
| PMOS20T | yes | yes | yes | yes | yes | yes; gpd=2 | yes | yes |
| PMOS20M | yes | yes | yes | yes | yes | yes; gpd=2 | yes | yes |
| PMOS20H | yes | yes | yes | yes | yes | yes; gpd=2 | yes | yes |
| PMOS50T | yes | yes | yes | yes | yes | yes; gpd=2 | yes | yes |
| PMOS50M | yes | yes | yes | yes | yes | yes; gpd=2 | yes | yes |
| PMOS50H | yes | yes | yes | yes | yes | yes; gpd=2 | yes | yes |
| PMOS50HS | yes | yes | yes | yes | yes | yes; gpd=1 | yes | yes |
2. Low Voltage MOS Transistors
2.1: CDF Parameters for Simulation and for the Pcell
| Parameter | Name | Dependencies | Miniumum | Maximum |
|---|---|---|---|---|
| Width | wtot | wtot=w*ng | see ENG-243 | maxmoswidth |
| Width Stripe | wg | w=wtot/ng | see ENG-243 | maxmoswidth/ng |
| Length | l | independent | see ENG-243 | maxmoslength |
| Number of Gates | ng | independent | 1 | maxmoswidth/min_width |
2.2 Parameters for LV MOS Pcells only
| Parameter | Name | Description |
|---|---|---|
| MOS transistor Shape | MosShape | normal: Stripe type
transistor (default) snake: Snake type Transistor (for transistors with great lengths) |
| Number of bends | Bends | Only valid for snake Transistor; Number of diffusion bends |
| Top Contact | drainContact | True: Drain contacts are
drawn (default) False: No Drain contacts |
| Bottom Contact | sourceContact | True: Source contacts are
drawn (default) False: No Source contacts |
| Join Gates | jg | no: For ng>1; Gate
stripes are not connected together right: Gates are joined on the right side left: Gates are joined on the left side |
| Join all drains | jd | True: For ng>2; Drain
stripes are connected together False: Drain stripes are not connected together |
| Join all sources | js | True: For ng>1; Source
stripes are connected together False: Source stripes are not connected together |
| Guard Bar Left | leftGuard | Diff: Only diffusion; Cont: Bulk contacts; None: No guard on the left |
| Guard Bar Top | topGuard | Diff: Only diffusion; Cont: Bulk contacts; None: No guard on the top |
| Guard Bar Right | rightGuard | Diff: Only diffusion; Cont: Bulk contacts; None: No guard on the right |
| Guard Bar Bottom | bottomGuard | Diff: Only diffusion; Cont: Bulk contacts; None: No guard on the bottom |
| Substrate Contact | Substrate | True: Generates Bulk
contacts directly connected to Source False: No Bulk contacts |
2.3 Available Parameters for LV MOS Transistors
| Device | wtot | w | l | ng | MosShape | Bends | d,s Contact | Join G,D,S | Guard Bars | Substrate |
|---|---|---|---|---|---|---|---|---|---|---|
| NMOS4 | yes | yes | yes | yes | yes | yes | yes | yes | yes | yes |
| NMOSM4 | yes | yes | yes | yes | yes | yes | yes | yes | yes | yes |
| PMOS4 | yes | yes | yes | yes | yes | yes | yes | yes | yes | yes |
| PMOSM4 | yes | yes | yes | yes | yes | yes | yes | yes | yes | yes |
| NMOSI | yes | yes | yes | yes | no | disabled | yes | yes | yes | yes |
| NMOSIM | yes | yes | yes | yes | no | disabled | yes | yes | yes | yes |
| PMOSI | yes | yes | yes | yes | no | disabled | yes | yes | yes | yes |
| PMOSIM | yes | yes | yes | yes | no | disabled | yes | yes | yes | yes |
3. Capacitors
3.1: CDF Parameters for Simulation and for the Pcells
| Parameter | Name | Dependencies | Miniumum | Maximum |
|---|---|---|---|---|
| Capacitance | c | c=capa*area+capp*perimeter | 1fF | maxcapvalue |
| Width | w | only calculated if c or l is changed | ENG-243 | maxcapwidth/ng |
| Length | l | only calculated if c or w is changed | ENG-243 | maxcaplength |
| Area | area | area=w*l | min_width^2 | max_width^2 |
| Perimeter | perimeter | perimeter=2*(w+l) | 4*min_width | 4*max_width |
3.2 Parameters for Pcells only
| Parameter | Name | Description |
|---|---|---|
| N-Well or Substrate | gwell | N-Well: NTUB placed
under device Substrate: No Well under device |
| Guard Ring | well (cpm) | None: No Guard
Ring N-Well: NTUB placed with NDIFF Guard Ring Substrate: PDIFF Guard Ring in substrate |
| Substrate Guard Ring | well (cwpm) | None: No Guard
Ring Substrate: RPTUB Guard Ring in substrate |
| Guard Bar Left | rleft | Diff: NDIFF/PDIFF only; Cont: NTUB/PSUB contacts; None: No guard |
| Guard Bar Top | rtop | Diff: NDIFF/PDIFF only; Cont: NTUB/PSUB contacts; None: No guard |
| Guard Bar Right | rright | Diff: NDIFF/PDIFF only; Cont: NTUB/PSUB contacts; None: No guard |
| Guard Bar Bottom | rbottom | Diff: NDIFF/PDIFF only; Cont: NTUB/PSUB contacts; None: No guard |
| Ground Plane Left Contact | gpleftct | True: POLY1 contact row on
the left False: No POLY1 contact row on the left |
| Ground Plane Top Contact | gptopct | True: POLY1 contact row on
the top False: No POLY1 contact row on the top |
| Ground Plane Right Contact | gprightct | True: POLY1 contact row on
the right False: No POLY1 contact row on the right |
| Ground Plane Bottom Contact | gpbottom | True: POLY1 contact row on
the bottom False: No POLY1 contact row on the bottom |
| Top Plane Contact | tpcontact | right: One POLY2 contact row
on the right middle: One POLY2 contact row in the middle area: Whole POLY2 area filled with contacts |
3.3 Available Parameters for Capacitors
| Device | c | w | l | area | perimeter | gwell | well | Guard Bars | Ground Plane Contacts | Top Plane Contacts |
|---|---|---|---|---|---|---|---|---|---|---|
| CPOLY | yes | yes | yes | yes | yes | yes | no | yes | yes | no |
| CPM | yes | yes | yes | yes | yes | no | yes | no | no | no |
| CWPM | yes | yes | yes | yes | yes | no | yes | no | no | no |
4. Resistors
4.1: CDF Parameters for Simulation and for the Pcells
| Parameter | Name | Dependencies | Miniumum | Maximum |
|---|---|---|---|---|
| Resistance | r | r=Rsh*l/(w-delta_w) | - | - |
| Width | w | w=(Rsh*l)/r + delta_w | ENG-243 | max=0.1m |
| Length | l | l=r*(w-delta_w)/Rsh | minl | max=0.1m |
| Multiplier | m | Fixed value = 1 | - | - |
4.2 Parameters for Pcells only
| Parameter | Name | Description |
|---|---|---|
| Resistor shape | ResShape | 45_deg: 45 degree bends if
bends>0 90_deg: 90 degree bends if bends>0 |
| Number of bends | Bends | Number of resistor bends |
| Dummy Structure | dummy | True: Generates dummy
structures around the resistor False: No dummy structure |
| Guard Type | gwell | N-Well: NTUB placed under
device Substrate: No Well under device |
| Guard Bar Left | rleft | Diff: NDIFF/PDIFF only; Cont: NTUB/PSUB contacts; None: No guard |
| Guard Bar Top | rtop | Diff: NDIFF/PDIFF only; Cont: NTUB/PSUB contacts; None: No guard |
| Guard Bar Right | rright | Diff: NDIFF/PDIFF only; Cont: NTUB/PSUB contacts; None: No guard |
| Guard Bar Bottom | rbottom | Diff: NDIFF/PDIFF only; Cont: NTUB/PSUB contacts; None: No guard |
| Guard Ring | guard | True: Diffusion Guard Ring
to the NTUB/Substrate False: No NTUB/Substrate Guard Ring |
| HV Guard Ring | guardhv | True: RPTUB Guard ring
around the DNTUB False: No Substrate connection |
| Precision | precision | True: Creates a precision
unit resistor structure (ENG-243 page 70) False: Generates a standard resistor structure |
4.3 Available Parameters for Resistors
| Device | r | w | l | m | ResShape | Bends | dummy | gwell | Guard Bars | guard | guardhv | precision |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RPOLY2 | yes | yes | yes | disabled | yes | yes | yes | yes | yes | no | no | yes |
| RPOLYH | yes | yes | yes | disabled | yes | yes | yes | yes | yes | no | no | no |
| RDIFFN3 | yes | yes | yes | disabled | yes | yes | yes | no | yes | no | no | no |
| RDIFFP3 | yes | yes | yes | disabled | yes | yes | yes | no | yes | no | no | no |
| RDIFFNR | yes | yes | yes | disabled | yes | yes | yes | no | no | yes | yes | no |
| RDIFFPS | yes | yes | yes | disabled | yes | yes | yes | no | no | yes | yes | no |
| RNWELL | yes | yes | yes | disabled | yes | yes | yes | no | yes | no | no | no |
| RNWELLS | yes | yes | yes | disabled | no | no | no | no | no | no | yes | no |
| RPWELLR | yes | yes | yes | disabled | no | no | no | no | no | no | yes | no |
5. JFETs
5.1: CDF Parameters for Simulation and for the Pcell
| Parameter | Name | Dependencies | Miniumum | Maximum |
|---|---|---|---|---|
| Width | w | independent | ENG-243 | - |
| Length | l | Fixed value l=2.5um | - | - |
| Number of Stripes | mult | independent | - | - |
5.2 Available Parameters for JFETs
| Device | Layout | w | l | mult |
|---|---|---|---|---|
| PJFET | Pcell | yes | disabled | yes |
6. Bipolars
6.1: CDF Parameters for Simulation
| Parameter | Description | Dependencies | Miniumum | Maximum |
|---|---|---|---|---|
| Multiplier | m | Fixed value m=1 | - | - |
| area | area | Fixed value area=1 | - | - |
6.2 Available Parameters for Bipolars
| Device | Layout | m | area |
|---|---|---|---|
| LAT2 | Fixed Layout | disabled | disabled |
| VERT10_4 | Fixed Layout | disabled | disabled |
| VERTN1 | Fixed Layout | disabled | disabled |
| VERTPH | Fixed Layout | disabled | disabled |