GSDHV

High Voltage Gate Protection Diodes

 

Functional Description

GSDHV is a combination of two high voltage gate protection diodes, which are intended to operate jointly with a series resistor. It provides both forward and reverse clamps between the gate and the internal positive power supply VDDA and between the gate and p-substrate (internal VSSA). The INPUT terminal can directly be connected to a gate.

Comments:
The gate potentials within internal circuits must be limited according to the TIPs document.

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Key Features

  • Signal Range: 0...40 V
  • Protection Diodes to VDDA and VSSA (P-Substrate)


  • Height: 14.9 µm
    Width: 33.4 µm
    Area: 500 µm²

Pin List

PinDescriptionCapacitance
INPUT Gate terminal 1.5 pF
VDDA Internal Bus -
VSSA Internal Bus -

 

Electrical Parameters

Conditions:
  • Junction Temperature: 0...27...100 °C

 

Parameter Symbol Conditions Min Typ Max Unit
Supply Voltage Range VDDA       40 V
Input Voltage Range INPUT   0   VDDA V
Leakage current IL 100 °C     20 nA