Dual Transmission Gate: TG1DB

 

Key Features

  • Low Input Capacitance
  • Small Clock Feedthrough
  • Small Area 908µm²
  • Size x=25.8µm y=35.2µm
  • Replaces two single transmission gates TG1B

Symbol

Description

The TG1DB is a dual transmission gate with small MOSFET dimensions (minimum widths). It is intended for use in switch-capacitor circuits and has symmetrically sized device geometries for minimal clock feedthrough.

Pin List

Pin Description Capacitance
a input 1 0.01pF
b input 2 0.01pF
out common output 0.01pF
en clock1 0.05pF
ep inverted clock1 0.05pF
en clock2 0.05pF
ep inverted clock2 0.05pF
vdda positive analogue power supply x
vssa negative analogue power supply x

Electrical Parameters

Parameter Symbol Min Typ Max Unit
Power Supply Range Vdd 4.5
5.0
5.5
V
Temperature Range Temp -50
25
125
deg
Ron at VSS ron 0.7
1.4
2.3
kOhms
Ron at VDD ron 3.9
4.6
5.8
kOhms
Ron MAX ron 4.4
5.4
7.1
kOhms
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