Voltage and Current Levels for 5.0V/5.0V Nominal Supply Voltage

Junction Temperature Tj = -40 to 125°C

These periphery cells are level shifting periphery cells, which provide 5.0V levels to the core area of the chip and 5.0V levels at the pads of the chip.

 

Input paths of input and IO level shifting periphery cells

Type Cell Name Vil Vih Iil (1) Iih (2) Note
min max min max
A ICP_V5 BBC[1-24][P,SP,SMP]_V5(4) 30% 70% NA -1.0µA NA 1.0µA CMOS (3)
B ICUP_V5 BBCU[1-24][P,SP,SMP]_V5(4) 30% 70% -30µA -100µA NA NA CMOS w/pullup (3)
C ICDP_V5 BBCD[1-24][P,SP,SMP]_V5(4) 30% 70% NA NA 30µA 100µA CMOS w/pulldown (3)
D ITP_V5 BBT[1-24][P,SP,SMP]_V5(4) 0.8V 2.0V NA -1.0µA NA 1.0µA TTL
E ITUP_V5 BBTU[1-24][P,SP,SMP]_V5(4) 0.8V 2.0V -30µA -100µA NA NA TTL w/pullup
F ITDP_V5 BBTD[1-24][P,SP,SMP]_V5(4) 0.8V 2.0V NA NA 30µA 100µA TTL w/pulldown
FSA ISP_V5 BBS[1-24][P,SP,SMP]_V5(4) see below NA -1.0µA NA 1.0µA Schmitt Trigger
FSB ISUP_V5 BBSU[1-24][P,SP,SMP]_V5(4) see below -30µA -100µA NA NA Schmitt Trigger w/pullup
FSC ISDP_V5 BBSD[1-24][P,SP,SMP]_V5(4) see below NA NA 30µA 100µA Schmitt Trigger w/pulldown

 

Schmitt Trigger Input Data
Type Characteristics Conditions Minimum Maximum
FSA,FSB,FSC Negative-Going Treshold Vt- VDD=4.5V
VDD=5.5V
1.62V
2.04V
1.78V
2.22V
Positive-Going Treshold Vt+ VDD=4.5V
VDD=5.5V
2.72V
3.34V
2.89V
3.42V

 

NOTES: (1) Iil is tested at VDD = 5.5V and Vin = 0V
(2) Iih is tested at VDD = 5.5V and Vin = 5.5V
(3) CMOS input levels are in percentage of VDD
(4) [1-24] ... output drive strength of a cell in mA.
available: 1mA, 2mA, 4mA, 8mA, 12mA, 16mA, 24mA.
[P, SP, SMP] ... slew rate control
P ... no slew rate control.
SMP ... moderate slew rate control.
SP ... slew rate control.



Output paths of output and IO periphery cells

Type Cell Name Vol Voh Iol (2) Ioh (3) Ioz (4) Note
V V mA mA µA
Z BU[1-24][P,SP,SMP]_V5(5) BB*[1-24][P,SP,SMP]_V5(5) 0.4 4.0 [1-24](5) [1-24](5) NA CMOS(6)
X BUDU[1-24]P_V5(5) 0.4 4.0 NA [1-24](5) -10 CMOS(6) open-drain pullup (1)
W BUDD[1-24]P_V5(5) 0.4 4.0 [1-24](5) NA 10 CMOS(6) open-drain pulldown (1)
V BT[1-24][P,SP,SMP]_V5(5) 0.4 4.0 [1-24](5) [1-24](5) ±10 CMOS(6) tristate

 

NOTES: (1) At test time a 1.5 kOhm resistor is tied to VSS or VDD on open drain device to force a signal level when the device is in a high-impedance state.
(2) Vol, Iol is tested at VDD = 4.5V
(3) Voh, Ioh is tested at VDD = 4.5V
(4) Ioz is tested with VDD = 5.5V
(5) [1-24] ... output drive strength of a cell in mA.
available: 1mA, 2mA, 4mA, 8mA, 12mA, 16mA, 24mA.
[P, SP, SMP] ... slew rate control
P ... no slew rate control.
SMP ... moderate slew rate control.
SP ... slew rate control.
(6) specification covers CMOS and TTL level specification